发明名称 THIN FILM LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve problems, such as (1) high dissipation loss by hysteresis characteristic, (2) low insulation dielectric strength, (3) low transmittance by crystal anisotropy, (4) low transmittance by lead system oxide, (5) reaction to a luminescence layer, and the like, when composition of a lead titanate zirconate film, which has high dielectric characteristic, is used for an insulated layer by making the composition the optimal, concerning to a thin film light emitting element, which is constituted with sandwiching the luminescence layer from both sides of front and back side by a pair of insulated layers, which consist of at least one layer, respectively, and inserting them between a pair of electrodes. SOLUTION: By making the composition of the above lead titanate zirconate the optimal, or adding optimal quantity of La or Al to it, the lead titanate zirconate film, which is suitable for the thin film light emitting element, can be formed.
申请公布号 JP2003007477(A) 申请公布日期 2003.01.10
申请号 JP20010185401 申请日期 2001.06.19
申请人 SHARP CORP 发明人 IIJIMA RYUTA
分类号 H05B33/22;(IPC1-7):H05B33/22 主分类号 H05B33/22
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