PURPOSE: A dry etch apparatus is provided to prevent a floating phenomenon of byproducts in the inside of a process chamber by increasing an absorbing force for absorbing the byproducts in a dry etch process. CONSTITUTION: An electrostatic chuck(104) is installed in the inside of a process chamber(102) in order to grasp a semiconductor substrate(100). A grasping portion is projected to an upper face portion of the electrostatic chuck(104). A gas supply portion(106) is connected with an upper portion of the process chamber(102). An upper electrode(108) is used for supplying RF power. A lower electrode is formed in the inside of the electrostatic chuck(104). A driving portion(110) is connected with a lower portion of the electrostatic chuck(104) in order to drive the electrostatic chuck(104) to an upper or a lower direction. A baffle plate(112) is installed at a side of the electrostatic chuck(104). A door(114) is installed at one side of the lower portion of the process chamber(104). A vacuum pump(116) and a valve(118) are connected with the other side of the lower portion of the process chamber(104). A shadow ring(120) is installed on an upper portion of the electrostatic chuck(104).
申请公布号
KR20030003601(A)
申请公布日期
2003.01.10
申请号
KR20010039525
申请日期
2001.07.03
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JIN SEONG;LEE, YEONG CHEOL;LEE, YEONG GU;PARK, JEONG TAE