| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor film by which the occurrence of cracks and warps can be suppressed, while a nitride semiconductor film is secured widely in the same degree as that of a substrate. SOLUTION: A GaN film 12 which is a first semiconductor film is epitaxially grown on a sapphire substrate 11, and a pyrolytically decomposed layer 14 is interposed between the substrate 11 and film 12 by irradiating the film 12 with a laser light from the rear surface side of the substrate 11. After a GaN film 15, which is a second semiconductor film is epitaxially grown while the GaN film 12, is kept on the sapphire substrate 11, the temperature of the substrate 11 is lowered to room temperature. When the substrate 11 is separated from the GaN films 12 and 15 thereafter, a GaN substrate 16 having almost the equal area as the sapphire substrate 11 has is obtained. |
