CONTROL METHOD OF POWER DOWN VOLTAGE, DEVICE, AND SEMICONDUCTOR MEMORY HAVING THE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for controlling power down voltage by which DPD entry and DPD leaving can be performed with the minimum current variation, and to provide a semiconductor memory having the device. SOLUTION: A device for controlling entry to DPD and leaving from DPD of a semiconductor memory comprises a plurality of voltage generators providing operation voltage to the semiconductor memory, a DPD controller sensing a DPD state and generating a DPD signal to control application of the operating voltage for the semiconductor memory, and a bias circuit biasing a plurality of nodes of at least one voltage generator out of the plurality of voltage generators to at least one prescribed voltage potential to prevent an erroneous trigger of a circuit in DPD mode entry/leaving.