| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to improve an etch profile of a word line and a gap-fill characteristic of an interlayer dielectric and obtain a process margin in a metal contact process by minimizing a loss of a word line hard mask. CONSTITUTION: A plurality of word line patterns are formed. A lower landing plug contact(28) is formed on a gap between the word line patterns. An etch stop layer(29) is formed on an entire structure including the lower landing plug contact(28). A bit line contacted with the lower landing plug contact(28) is formed by using the same material as the etch stop layer. A plurality of interlayer dielectrics(31,32) are formed on the entire surface of the resultant including the bit line. The interlayer dielectrics(31,32) are etched using the etch stop layer(29). The lower landing plug contact(28) is opened etching the etch stop layer(29).
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