| 摘要 |
PURPOSE: A method for forming simultaneously a diffusion barrier and an ohmic contact layer using a titanium nitride layer is provided to improve a semiconductor device by simplifying a fabrication process and preventing oxidation of TiSi2. CONSTITUTION: A titanium nitride layer(34) is deposited on a semiconductor layer(31) including silicon by using one of a physical chemical vapor deposition method, a chemical vapor deposition method, and an atomic layer deposition method. A titanium-silicon layer including the remaining titanium and the remaining silicon is formed on a surface of the titanium nitride layer(34) by using a plasma process. The titanium-silicon layer is changed into a titanium silicon nitride layer(35) by performing a thermal process under gas atmosphere including nitrogen. Simultaneously, TiSi2(36) is formed on a boundary between the titanium nitride layer(34) and the semiconductor layer(31).
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