| 摘要 |
PURPOSE: A method for fabricating a PMOS FET is provided to form a shallow junction and improve an electrical characteristic of a semiconductor device by performing a germanium ion implantation process for forming a source/drain electrode. CONSTITUTION: A gate electrode(10) including a gate oxide layer is formed on an N-type semiconductor substrate. A P-type lightly doped region(20) is formed on an upper portion of the N-type semiconductor substrate of both sides of the gate electrode(10) including the gate oxide layer. An insulating layer spacer(30) is formed on both the sidewalls of the gate electrode(10). A source/drain region is formed by implanting germanium ions into the semiconductor substrate. A P-type doping process is performed on an entire surface of the semiconductor substrate.
|
