| 摘要 |
PROBLEM TO BE SOLVED: To provide a diffusion prevention film which can effectively suppress the permeation of hydrogen and which is superior in a hydrogen barrier property, to provide a method of manufacturing the diffusion preventive film, to provide a semiconductor memory element which is equipped with a capacitor comprising a stable ferreoelectric characteristic or a high dielectric characteristic and whose yield is satisfactory, and to provide a method of manufacturing the semiconductor memory element. SOLUTION: The diffusion prevention film 7 in which barium is contained and which is composed of an oxide of aluminum is deposited, the film 7 is heat-treated in the atmosphere of a mixed gas of oxygen and carbon dioxide, and the barium contained in the film 7 in adsorbed by the carbon dioxide. |
