SILICON-BASED LIGHT-EMITTING/RECEIVING ELEMENT, METHOD OF MANUFACTURING THE SAME, SILICON-BASED OPTOELECTRIC INTEGRATED CIRCUIT, AND SILICON-BASED OPTOELECTRIC INTEGRATED CIRCUIT SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting/receiving element and an optical waveguide for realizing optical wiring in a silicon-based integrated circuit. SOLUTION: This silicon-based light-emitting/receiving element is an efficient light emitting/receiving element utilizing the quantum size effect due to fine particles 15 of germanium existing in a second silicon crystal layer which is composed of an SOI layer 12 on an oxide film layer 11 and an intrinsic silicon epitaxial layer 16. The light emitted from these fine particles 15 is confined in a space sandwiched by the interface between the second silicon crystal layer and the oxide film layer 11 and another interface of the second silicon crystal layer on the opposite side to the oxide film layer 11. Consequently, the light is efficiently transmitted through the Second silicon crystal layer.