| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film material having a low permittivity, thermal stability and chemical resistance. SOLUTION: A preferred film is expressed by the formula Siv Ow Cx Hy Fz (v+ w+x+y+z=100%, v stands for 10-35 atom.%, w for 10-65 atom.%, y for 10-50 atom.%, x for 2-30 atom.%, and z for 0.1-15 atom.%), and fluorine is not bonded to carbon. The CVD process comprises (a) providing a substrate in a vacuum chamber; (b) introducing gaseous reagent containing a fluorine supply gas, an oxygen supply gas, and at least one precursor gas selected from among a group consisting of organosilane and organosiloxane; and (c) adding energy to the gaseous reagent for making a reaction of the gaseous reagent to form a film on the substrate to occur.
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