发明名称 MAGNETORESISTIVE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem that a multilayer film constituting a magnetoresistive effect element has dead regions which are affected by hard bias layers formed on both sides of the film and substantially incapable of exhibiting magnetoresistive effects near its side sections and the regions only work to raise the DC resistance of the element. SOLUTION: An electrode layer 18 is formed by extending the layer 18 onto the dead regions D of the multilayered film 16. Consequently, the DC resistance of the element can be reduced and the reproducing characteristic of the element can be improved, because a sense current from the electrode layer 18 can be made to effectively flow to the multilayered film 16 and, in addition, the joint area of the electrode layer 18 with the film 16 can be increased.
申请公布号 JP2003008109(A) 申请公布日期 2003.01.10
申请号 JP20020080058 申请日期 2002.03.22
申请人 ALPS ELECTRIC CO LTD 发明人 HASEGAWA NAOYA;HONDA KENJI;AOKI DAIGO;KAKIHARA YOSHIHIKO
分类号 G01R33/09;G11B5/39;H01F10/32;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
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