| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor whose crystallinity and ferroelectric characteristic are superior and to obtain a ferroelectric storage device which uses the ferroelectric capacitor. SOLUTION: In the ferroelectric capacitor, a silicide layer 42 composed of CoSi2 or the like, an Ag layer 43, an Ir layer 44, a lower electrode 45 composed of a conductive perovskite oxide, a perovskite ferroelectric layer 46, and an upper electrode 47 composed of a conductive perovskite oxide, are laminated sequentially on a silicon (100) substrate 41. In the semiconductor storage device, the ferroelectric capacitor is electically connected to a transistor.
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