LEAD FRAME, METHOD FOR FABRICATING THE SAME, AND SEMICONDUCTOR CHIP PACKAGE USING THE SAME

摘要

PURPOSE: A lead frame, a method for fabricating the same, and a semiconductor chip package using the same are provided to increase intensity of combination between a lead frame and a bonding wire without using Sn-Pb alloy. CONSTITUTION: A semiconductor chip package(10) includes a die pad(31), an inner lead(32) and an outer lead(33). A nickel plating layer(60) and a palladium plating layer(70) are formed on a total surface of the outer lead(33). A lead frame(30) is formed at a wire bonding portion of the inner lead(32). A silver plating layer(80) is formed on the lead frame(30). A semiconductor chip(20) is mounted on the die pad(31). The semiconductor chip(20) is electrically connected with the inner lead(32) by a bonding wire(40). The bonding wire(40) is electrically connected with the silver plating layer(80) of the inner lead(32). The semiconductor chip(20), the bonding wire(40), and the inner lead(32) are sealed by a package body(50).