发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can prevent the damage of a semiconductor wafer in a manufacturing process and thereby can increase a processing yield, and also to provide the semiconductor device. SOLUTION: The semiconductor device 17 is such that a reinforcing member 11 is bonded to a backside opposite from an electrode formation face of a semiconductor element via a resin adhesive material having a low elastic coefficient. In the method of manufacturing the semiconductor device 17, solder bumps 9' are formed on the electrode formation face of the semiconductor wafer 1, and thereafter, the reinforcing member 11 is bonded by thermocompression bonding to the backside opposite from the electrode formation face of the semiconductor wafer 1 via the resin adhesive material 12 having a low elastic coefficient. In this case, the thermocompression is conducted with the electrode formation face side being pressed against a pressing face of a thermocompression bonding stage 15 via a heat-resistant sheet 16, which is formed of a material having a low elasticity and has a thickness larger than the height of the solder bumps 9', and at a temperature lower than a melting point of the solder bumps 9'. Consequently, the damage of the semiconductor wafer during bonding the reinforcing member can be prevented to, increase a processing yield.</p>
申请公布号 JP2003007907(A) 申请公布日期 2003.01.10
申请号 JP20010186150 申请日期 2001.06.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAKAI TADAHIKO;OSONO MITSURU
分类号 H01L23/12;H01L21/60;(IPC1-7):H01L23/12 主分类号 H01L23/12
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