发明名称 METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT SENSOR AND METHOD OF MANUFACTURING THIN FILM MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an MB sensor by which the MR ratio of an MR sensor can be increased and the Hin of the sensor can be reduced without making the manufacturing process much complicated, and to provide a method of manufacturing a thin film magnetic head. SOLUTION: In the method of manufacturing an MR sensor, at least a conductive antiferromagnetic layer, a magnetized layer which is fixed in direction of magnetization through the exchange coupling with the antiferromagnetic layer, a nonmagnetic intermediate layer, and a freely magnetized film which can be changed in direction of magnetization in accordance with an impressed magnetic field upon another. After the nonmagnetic intermediate layer is formed, the surface of the formed intermediate layer is exposed to an oxygen-containing atmosphere by at least one time or, after the intermediate layer is formed halfway, the surface of the half-formed intermediately layer is exposed to the oxygen-containing atmosphere by at least one time and, thereafter, the remaining part of the layer is formed.
申请公布号 JP2003008106(A) 申请公布日期 2003.01.10
申请号 JP20010191417 申请日期 2001.06.25
申请人 TDK CORP 发明人 TSUCHIYA YOSHIHIRO;SASAKI TETSUO
分类号 G01R33/09;G11B5/31;G11B5/39;H01F10/16;H01F10/32;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
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