| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory and a semiconductor integrated circuit device in which a data input/output cycle can be varied quickly. SOLUTION: In this semiconductor memory, an internal clock synchronizing with a non-continuous external toggle signal PCLKINTCLK inputted with data read request is generated by an incorporated clock generating circuit. Data output processing and data output in the inside are performed synchronizing with the internal clock INTCLK. A data strobe signal STB indicating a data output cycle is outputted with data output. A cycle of the data strobe signal STB is same as a cycle of the internal clock INTCLK.
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