| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which two or more defective cell columns can be relieved without increasing circuit scale. SOLUTION: This device switches an electrical connection state between a data input/output circuit and a memory cell column being not adjacent and between a column selection signal generating circuit and a memory cell column being not adjacent. The device is provided with connection switching circuits 12 having the same element numbers as one stage shift redundant circuit having one fuse group corresponding to a plurality of memory cell columns, when defect is caused in a memory cell column and a data line DBA in memory cell arrays 11A, 11B, shift operation is performed for the data line DBA or the like corresponding to a memory cell column for redundancy and a memory cell column for redundancy by cutting off a fuse corresponding to a defective point.
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