| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a leak current can be reduced in a semiconductor memory driven by a plurality of power source voltages of which voltage levels are different. SOLUTION: Power source voltage VccA is supplied to a power source anode 837 of a sense amplifier 83. A bit line driver 741 outputs a column selecting signal VACSL consisting of power source voltage VccP to gate terminals of N channel MOS transistors 841, 842, of a GIO line gate circuit 84. When input/ output data is '1', power source voltage Vcc (Vcc<VccA) is supplied to a global line GIO or/GIO. In this case, when threshold voltage of the N channel MOS transistors 841, 842 is assumed to Vth, VccP<=Vcc+Vth is realized.
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