| 摘要 |
PROBLEM TO BE SOLVED: To provide a process monitoring method, which is capable of easily and accurately monitoring the state of a process (film forming, etching, and cleaning) carried out by a thin-film manufacturing apparatus, and to provide the thin-film manufacturing apparatus. SOLUTION: A film forming process of supplying a processing gas into a vacuum processing chamber 2, generating decomposition seeds through a heating catalyst 6, and depositing a deposit on a board 5, an etching process of dry- etching a thin film, and a cleaning process of cleaning the inside of the chamber are carried out. In these processes, electrical discharge is made to take place between electrodes 11, light generated by the above electrical discharge is received by a photomultiplier 15 through an observation window 13, and its spectrums are measured. The spectrums are compared with those obtained in a process in which the process has advances properly, and the process conditions are modified on the basis of a computer 16.
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