| 摘要 |
PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to easily remove defects by minimizing the curvature of a micro lens and improve the transmittance by thinning the thickness of micro lens. CONSTITUTION: The CMOS image sensor comprises a micro lens(11) formed on an OCM(Over Coating Material) layer(10) and a low-temperature oxide layer(12) having good fluidity formed on the micro lens(11). At this time, the thickness of the micro lens(11) is about 1-1.5 micrometer and the refractive index of the micro lens(11) is 1.7-2.3. The low-temperature oxide layer(12) having thickness of 5000-15000 angstrom is deposited by PECVD(Plasma Enhanced CVD).
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