| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to control oxidation of a titanium nitride layer by depositing or ion-implanting a material having a low oxidation potential on the titanium nitride layer. CONSTITUTION: Either one of aluminum, platinum, tungsten or tungsten silicide is used as the material having a low oxidation potential. A sputtering method or a chemical vapor deposition(CVD) method is used in a deposition process. Silicon ions are implanted into the titanium nitride layer by an ion accelerating implantation method or a thermal oxidation method.
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