发明名称 |
Slurry for chemical mechanical polishing silicon dioxide |
摘要 |
A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.
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申请公布号 |
US2003006397(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020192471 |
申请日期 |
2002.07.10 |
申请人 |
SRINIVASAN RAMANATHAN;BABU SURYADEVARA V.;AMERICA WILLIAM G.;HER YIE-SHEIN |
发明人 |
SRINIVASAN RAMANATHAN;BABU SURYADEVARA V.;AMERICA WILLIAM G.;HER YIE-SHEIN |
分类号 |
C09G1/02;(IPC1-7):C09K13/00 |
主分类号 |
C09G1/02 |
代理机构 |
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