发明名称 SMALL ASPECT RATIO MMIC POWER AMPLIFIER LAYOUT
摘要 A small aspect ratio, high power MMIC amplifier is disclosed. The small aspect ratio MMIC amplifier is capable of achieving the same power levels as conventional power amplifier designs, but with an aspect ratio of near 1:1, versus 4:1 of conventional power amplifiers. The small aspect ratio MMIC amplifier layout uses two different types of FETs, with all gate fingers of both types of FETs running in the same direction. One type of FET is a conventional FET, in which the gate stripes run parallel to the direction of the output. In the conventional FET, the gate manifold and the drain manifold both generally extend in the x-direction (parallel to each other). The other type of FET has gate fingers that run perpendicular to the direction of the output. In this other type of FET, the gate manifold generally extends in the x-direction, while the drain manifold generally extends in the y-direction (perpendicular to each other). By using two different types of FETs, large gate width power FETs can be placed on two, three or four sides of the MMIC.
申请公布号 US2003006847(A1) 申请公布日期 2003.01.09
申请号 US20010900562 申请日期 2001.07.06
申请人 NANOWAVE, INC. 发明人 NELSON STEPHEN R.
分类号 H01L27/02;H01L27/088;(IPC1-7):H03F3/14 主分类号 H01L27/02
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