发明名称 |
FOUR-PHASE CHARGE PUMP WITH LOWER PEAK CURRENT |
摘要 |
A four-phase charge pump circuit suitable for use on integrated circuits, such as flash memory devices, includes circuitry that drives charge pump nodes in two components separated by a time delay. The two components can be triggered by edges from the clocks that control the timing of the charge pump. Driving the charge pump nodes in two components separated by a delay decreases the peak current of the charge pump and improves noise characteristics of a voltage supply or ground line connected to the charge pump.
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申请公布号 |
US2003006824(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US19990355654 |
申请日期 |
1999.08.02 |
申请人 |
LIN YU SHEN;HUNG CHUN-HSIUNG;WAN RAY-LIN |
发明人 |
LIN YU SHEN;HUNG CHUN-HSIUNG;WAN RAY-LIN |
分类号 |
H02M3/07;(IPC1-7):G05F3/02 |
主分类号 |
H02M3/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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