| 摘要 |
PURPOSE: A high voltage generation circuit of a semiconductor memory device is provided to reduce current consumption during a refresh operation by driving each of n number of Vpp pumping circuits and to implement a stable operation by separably driving the Vpp pumping circuits. CONSTITUTION: A high voltage generation circuit of a semiconductor memory device includes a high voltage control block for outputting a pump enable signal(b) and an enable signal of an oscillation block by comparing a high voltage and a reference voltage level, the oscillation block for oscillating n number of constant pulses by inputting the enable signal of the oscillation block, a delay circuit block for outputting Vpp pump driving signal by inputting the pump enable signal(b) and a refresh enable signal(c) and n umber of Vpp pump circuit blocks for generating a high voltage level by inputting the constant pulse signal of the oscillation block and the Vpp pump driving signal.
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