| 摘要 |
PURPOSE: A method for fabricating a metal interconnection is provided to prevent a contact area between a tungsten plug and a metal interconnection from increasing so that via resistance is reduced, by forming a tungsten spacer on the sidewall of the metal interconnection. CONSTITUTION: The metal interconnection(33) is formed on a substrate insulated by an insulation layer, in which the substrate is electrically connected to the metal interconnection. A conductive layer spacer is formed on the insulated substrate(31) at both sides of the metal interconnection. A flat interlayer dielectric(35) is formed on the entire surface including the conductive layer spacer. The interlayer dielectric is selectively etched to form a via hole by using a via contact mask. A plug filling the via hole is formed.
|
