METHOD FOR MINIMIZING TUNGSTEN OXIDE EVAPORATION DURING SELECTIVE SIDEWALL OXIDATION OF TUNGSTEN-SILICON GATES

摘要

In selective oxidation of gate structures known per se, which contain a polycrystalline silicon layer and a tungsten layer, tungsten oxide evaporation is prevented or at least substantially reduced by means of a special process control, whereby the gate structure is exposed to a non-aqueous inert gas containing hydrogen before and optionally after a treatment step with a hydrogen/water mixture.