| 摘要 |
PURPOSE: A flash memory device is provided, which reduces a cell current when performing a program operation by adjusting a source voltage of the flash memory cell, and improves a program speed. CONSTITUTION: The flash memory device comprises a flash memory cell array(10), and a multiplexer(50) to select a bit line of the flash memory cell array, and a decoder(20) to select a word line of the flash memory cell array according to a global word line signal and a control signal and a local word line signal and a predecoder signal. An internal voltage generation unit(40) generates an internal voltage. And a source control unit(30) applies the internal voltage from the internal voltage generation unit to a source of the flash memory cell not selected according to the global word line signal and a sector program signal and a sector coding signal and a read signal.
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