发明名称 |
Method for controlling dopant profiles and dopant activation by electron beam processing |
摘要 |
An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.
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申请公布号 |
US2003008481(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020211854 |
申请日期 |
2002.08.02 |
申请人 |
ROSS MATTHEW F.;HANNES CHARLES;LIVESAY WILLIAM R. |
发明人 |
ROSS MATTHEW F.;HANNES CHARLES;LIVESAY WILLIAM R. |
分类号 |
H01L21/263;(IPC1-7):H01L21/04;H01L21/42 |
主分类号 |
H01L21/263 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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