FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a transistor that advantageously uses a portion of the surface, which is provided in conventional transistors for insulating the transistors. This enables the enlargement of the channel width to self-adjust without the risk of short-circuits. The inventive field effect transistor is advantageous in that a distinct increase in the channel width that is active for the forward current ION can, compared to conventional transistor structures used up to now, be guaranteed without having to accept a decrease in the attainable integration density. This permits, for example, the forward current ION to increase by 50 % without having to modify the arrangement of the active regions or of the trench insulation.