发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR THIN FILM AND METHOD OF PRODUCING SOLAR CELL |
摘要 |
<p>After a hydrogen high−concentration layer having a concentration peak at a position at least 5μm deep from a main surface is formed in a depth−direction hydrogen concentration profile by implanting hydrogen minus ions into a semiconductor crystal substrate from the main surface thereof,a semiconductor thin film is separated from the semiconductor crystal substrate in the hydrogen high−concentration layer.Accordingly,a method of producing a semiconductor thin film is provided that can produce with high yield and efficiency a semiconductor thin film which is thicker than a lower−limit value by a conventional smart−cut method and therefore is suitable for a solar cell or the like.</p> |
申请公布号 |
WO03003434(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
WO2002JP05718 |
申请日期 |
2002.06.10 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;ABE, TAKAO;YOKOKAWA, ISAO |
发明人 |
ABE, TAKAO;YOKOKAWA, ISAO |
分类号 |
C23C14/48;H01L21/02;H01L27/12;H01L31/04;H01L31/18;(IPC1-7):H01L21/265 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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