| 摘要 |
<p>The invention relates to a trench capacitor, in particular for use in a semiconductor memory cell, comprising a trench (2), embodied in a substrate (1), a first region (1a), provided in the substrate (1), as first capacitor electrode, a dielectric layer (10) on the trench wall as capacitor dielectric and a metallic filler material (30'') provided in the trench (2) as second electrode. Above the conducting metallic filling material (30'') a dielectric filling material (35) is provided in the trench (2) with a cavity (40) provided for mechanical tensions. The invention further relates to a corresponding method of production.</p> |
