| 摘要 |
PURPOSE: A method for manufacturing a capacitor having a ruthenium electrode is provided to prevent attacks of the ruthenium electrode due to wet chemicals by removing photoresist and etch residues using a laser. CONSTITUTION: A capacitor oxide layer(25) is formed on a semiconductor substrate(21) having a polysilicon plug(24). A storage node contact hole having a concave structure is formed by selectively etching the capacitor oxide layer(25). A ruthenium film and a photoresist layer are sequentially formed on the resultant structure. A lower electrode(26) is formed by selectively etching the ruthenium film to expose the capacitor oxide layer(25) using the photoresist layer as an etch stopper. The photoresist and etch residues are entirely removed by irradiating a laser into the resultant structure.
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