METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to improve reliability of devices by removing a photoresist layer remained at inner walls of a contact hole using mega-sonic. CONSTITUTION: Fine contact holes are formed at a cell part(80) in a DRAM part(200), and a lower electrode and a dielectric film are simultaneously formed at a capacitor region(40) of a logic part(100). A contact plug is filled into the fine contact holes and the dielectric film is patterned by using a photoresist pattern. At this time, the photoresist pattern remaining at inner walls of the contact holes is removed by mega-sonic and deionized water. Then, the second contact plug(31) and an upper electrode(33) are simultaneously formed on the cell part(80) and the capacitor region(40), respectively.