发明名称 Method for producing group III nitride compound semiconductor light-emitting element
摘要 After a p seat electrode is laminated on a light-transmissive electrode, the two electrodes are heated at a relatively low temperature to thereby remove gas (degassing) from between the two electrodes. Then, the two electrodes are alloyed with each other at a high temperature.
申请公布号 US2003008425(A1) 申请公布日期 2003.01.09
申请号 US20020162256 申请日期 2002.06.05
申请人 UEMURA TOSHIYA 发明人 UEMURA TOSHIYA
分类号 H01L21/28;H01L21/285;H01L33/22;H01L33/32;H01L33/42;(IPC1-7):H01L21/00 主分类号 H01L21/28
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