发明名称 |
PROCESS FOR MANUFACTURING SILICON EPITAXIAL WAFER |
摘要 |
There is provided a process for manufacturing a silicon epitaxial wafer capable of manufacturing an epitaxial wafer, which exerts a stable IG capability without being affected by a thermal history of a substrate for epitaxial growth and has the IG capability excellent from an early stage of a device process, and particularly, canceling an IG shortage in an N/N+ epitaxial wafer caused by a problem that oxygen precipitation is hard to proceed in an N+ substrate with a simple and easy way. RTA (rapid heating and rapid cooling heat treatment) is performed at a temperature of 1200° C. to 1350° C. for 1 to 120 seconds on a silicon substrate for epitaxial growth; further heat treatment is performed at a temperature of 900° C. to 1050° C. for 2 to 20 hours on the silicon substrate for epitaxial growth; and thereafter, an epitaxial layer is formed on a surface of the silicon substrate.
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申请公布号 |
US2003008480(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020019298 |
申请日期 |
2002.01.04 |
申请人 |
TAKENO HIROSHI;KOBAYASHI NORIHIRO |
发明人 |
TAKENO HIROSHI;KOBAYASHI NORIHIRO |
分类号 |
C30B29/06;H01L21/322;(IPC1-7):H01L21/36 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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