SEMICONDUCTOR FILM, METHOD FOR FORMING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a semiconductor film in which projections produced in the semiconductor film is removed and the surface is made flat and to provide a semiconductor device having satisfactory characteristics by using the semiconductor film. CONSTITUTION: An a-Si film 12 formed on an insulating substrate 10 is irradiated with a laser beam 14, and a p-Si film 13 is obtained. The surface of the p-Si film 13 is oxidized under high pressure, and a surface oxidized film 13a is formed. Thus, the height of projections 100 occurred on the surface of the p-Si film 13 is reduced, and the surface of the p-Si film 13 can be planarized by removing the surface oxidized film 13a.