发明名称 |
VAPOR GROWTH METHOD AND VAPOR GROWTH DEVICE |
摘要 |
A vapor growth method for vapor−growing a semiconductor single crystal thin film on the main surface of a semiconductor single crystal substrate(1)while introducing a gas into a reaction container(11),characterized in that a heating output control in a gas introduced region(R1)is performed based on a temperature detected in a region other than the region(R1)in the reaction container(11).
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申请公布号 |
WO03003432(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
WO2002JP06155 |
申请日期 |
2002.06.20 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;KASHINO, HISASHI |
发明人 |
KASHINO, HISASHI |
分类号 |
C30B25/02;C30B25/10;C30B25/16;(IPC1-7):H01L21/205;C23C16/52 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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