METHOD FOR FORMING METAL WIRE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wire of a semiconductor device is provided to reduce a wiring resistance and restrain the generation of a void after a metal flow process is performed. CONSTITUTION: An interlayer dielectric(310) is formed on a semiconductor substrate(300). The first metal layer(320) is formed on the interlayer dielectric(310). The first capping layer(330) is formed on the first metal layer(320). The first capping layer(330) is formed with a titanium/titanium nitride layer. An insulating layer(340) is formed on the first capping layer(330). A photoresist layer pattern having an opening portion(344) is formed on the insulating layer(340) in order to expose a part of the insulating layer(340). A via contact hole(350) is formed by performing a wet etch process and a dry etch process. The second capping layer(355) is formed within the via contact hole(350). The second metal layer(360) is formed on the second capping layer(355).