| 摘要 |
PURPOSE: A method for forming a pattern in a semiconductor device is provided to prevent transformation and degradation of photoresist due to the chemical reaction between etch residues and photoresist. CONSTITUTION: An oxide layer(22) as an etch object layer is formed on a semiconductor substrate(21). A photoresist pattern(23) is formed on the oxide layer(22) by coating a photoresist layer and exposing the photoresist layer using ArF source. A polymer(24) is formed at both sidewalls of the photoresist pattern(23) for ArF exposure. The oxide layer(22) is then selectively etched by using the polymer(24) and the photoresist pattern(23) as a mask.
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