| 摘要 |
PURPOSE: A method of forming a lower electrode of a capacitor is provided to restrain a leakage current and to reduce manufacturing costs by using etch-back processing without using additional mask and cleaning solution. CONSTITUTION: A storage node oxide layer(135) is formed on a semiconductor substrate. Storage node contact holes are formed by selectively etching the storage node oxide layer(135) of a cell region. A rubidium(Ru) film is deposited on the resultant structure. A photoresist layer is entirely filled into the storage node contact holes by coating and selectively etching the photoresist layer. The exposed rubidium film is performed by etch-back, thereby forming a lower electrode pattern(140a). At this time, the etching gas for the etch-back is composed of Cl2 and/or Ar containing SF6. Then, the photoresist layer is removed.
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