| 发明名称 |
Semiconductor device and fabrication process thereof |
| 摘要 |
A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.
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| 申请公布号 |
US2003008472(A1) |
申请公布日期 |
2003.01.09 |
| 申请号 |
US20020231046 |
申请日期 |
2002.08.30 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
YOSHIMURA TETSUO;KUZUYA SHINJI;SUKEGAWA KAZUO;IZAWA TETSUO |
| 分类号 |
H01L21/76;H01L21/762;H01L23/544;H01L27/12;H01L29/00;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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