| 发明名称 |
Method of forming lattice-matched structure on silicon and structure formed thereby |
| 摘要 |
A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD).
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| 申请公布号 |
US2003008521(A1) |
申请公布日期 |
2003.01.09 |
| 申请号 |
US20020059422 |
申请日期 |
2002.01.31 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOJARCZUK NESTOR ALEXANDER;COPEL MATTHEW WARREN;GUHA SUPRATIK;NARAYANAN VIJAY |
| 分类号 |
H01L21/20;H01L21/316;H01L21/36;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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