发明名称 |
Selective barrier metal fabricated for interconnect structure manufacturing process |
摘要 |
A method to fabricate an interconnect structure is provided. First, an inter-metal dielectric layer is formed on a substrate. Then the inter-metal dielectric layer is etched to form a trench, and a barrier layer is formed on the trench. After, a metal layer is formed to fill in the trench over the barrier layer. Then a chemical mechanical polishing (CMP) process is performed to remove the barrier layer and the metal layer on the inter-metal dielectric layer. Finally, a conductive sealing layer is formed to cover the metal layer.
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申请公布号 |
US2003008495(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20010897134 |
申请日期 |
2001.07.03 |
申请人 |
HSUE CHEN-CHIU;LEE SHYH-DAR;CHEN LUNG;WANG CHING-FAN |
发明人 |
HSUE CHEN-CHIU;LEE SHYH-DAR;CHEN LUNG;WANG CHING-FAN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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