METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent roughness of the surface of a TiN layer by minimizing crystallization reaction of the TiN layer, and to improve a leakage current characteristic by making the TiN layer having no Cl. CONSTITUTION: The surface of a silicon substrate(100) having a lower electrode is nitridized by using plasma. A dielectric layer(140) is formed on the resultant structure by using chemical vapor of a tantalum component. The TiN layer as an upper electrode(160) is formed on the dielectric layer by using an atomic layer deposition(ALD) method.