SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PURPOSE: To suppress oxidation generating on an interior wall of a device isolation trench during thermal oxidation process. CONSTITUTION: A surface of a silicon oxide film 6 which is embedded inside a device isolation trench 4 is formed with a nitrogen introduction layer 7 having a small diffusion coefficient relative to an oxidation agent. The nitrogen introduction layer 7 functions as a barrier layer for preventing the oxidation agent under vapor phase during a thermally processing process from diffusing within the silicon oxide film 6. The nitrogen introduction layer 7 is formed by implanting ion on the entire surface of the substrate, and then by thermally processing the substrate 1 to activate nitrogen.