| 摘要 |
PURPOSE: A method for annealing a flowable interlayer dielectric is provided to improve the stability of insulating layer by performing two-step annealing using oxygen and N2 gas. CONSTITUTION: In annealing for densification of a flowable insulating layer, the flowable insulating layer is firstly annealed at lamp-up period by using an atmosphere containing O2. The flowable insulating layer is then secondly annealed by using N2 atmosphere. Then, the processing furnace is cooled at N2 atmosphere. Also, the processing furnace is cooled at the atmosphere containing O2. At this time, the first annealing is performed at a temperature of 500(±200)°C, and the second annealing is performed in the temperature range 600 to 1000°C.
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