| 摘要 |
PURPOSE: A method for fabricating a static random access memory(SRAM) is provided to improve an electrical characteristic of a thin film transistor(TFT) and to control a stringer of a channel layer by eliminating a channel edge of a gate in which a strong electric filed is generated, and to decrease the number of processes by forming the gate of the TFT through a damascene process. CONSTITUTION: An interlayer dielectric is formed on a silicon substrate(31) having a gate(35) and a bitline. An insulation layer pattern having a contact hole for defining a node contact region is formed on the interlayer dielectric. An insulation layer is formed on the insulation layer pattern. A trench process using a dual damascene method is performed to selectively pattern the insulation layer. The interlayer dielectric under the contact hole is selectively patterned by using the patterned insulation layer to form a trench exposing an active region of the silicon substrate. A plug and the gate(55) of the TFT are respectively formed on the insulation layer including the trench. A polysilicon layer pattern in contact with the plug is formed on the resultant structure including the gate of the TFT and the plug.
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