| 摘要 |
PURPOSE: A fabrication method of a capacitor in a semiconductor device is provided to be capable of effectively increasing the surface area of a lower electrode. CONSTITUTION: The second interlayer dielectric(32) is formed on a substrate(20) having plug layers(30a,30b). After forming a bit line(34a), the third interlayer dielectric(38) is formed on the resultant structure. The first contact hole is formed to expose the plug layer(30b) by sequentially etching the third and second interlayer dielectric. The first plug layer(42) is filled into the first contact hole. After forming an anti-oxidation layer(44) on the resultant structure, a plurality of conductive layers(46,48,50,52) and oxide layers(47,49,51,53) are sequentially stacked on the anti-oxidation layer(44). The second contact hole(60) is formed to expose the first plug layer(42) by selectively etching the plurality of conductive layers and oxide layers. After filling the second plug layer(62) into the second contact hole, a lower electrode is formed by removing the oxide layers(47,49,51,53).
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