| 摘要 |
PURPOSE: A method for forming an MIM(Metal Insulator Metal) capacitor is provided to easily perform via contact processing by forming a trench in a staked lower metal interconnection. CONSTITUTION: A trench is formed in a stacked lower metal interconnection(59). A dielectric film(51) and an upper metal film(53) are sequentially formed on the resultant structure including the trench. A photoresist pattern is formed in the trench by coating a photoresist layer and etching the photoresist layer using O2 plasma. Then, the photoresist pattern is planarized to expose the dielectric film(51) by etch-back using Cl2 and BCl3 plasma. An upper electrode of an analog capacitor(61) is formed to fill into the trench by etch-back the exposed dielectric film(51) using CxFy plasma.
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